Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE
نویسندگان
چکیده
منابع مشابه
Deep level defects in n-type GaN grown by molecular beam epitaxy
Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E150.23460.006, E250.57860.006, E350.65760.031, E450.96160.026, and E550.24060.012 eV. Among these, the levels labeled E1 , E2 , and E3 are interpreted as corresponding to deep levels...
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ژورنال
عنوان ژورنال: Materials Science-Poland
سال: 2016
ISSN: 2083-134X
DOI: 10.1515/msp-2016-0126